APT70SM70B
SICFET N-CH 700V 65A TO247Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation's APT70SM70B is a SiCFET N-Channel power MOSFET designed for high-efficiency applications. This component features a drain-source voltage (Vds) of 700 V and a continuous drain current (Id) of 65 A at 25°C (Tc), with a maximum power dissipation of 300 W (Tc). The device exhibits a low on-resistance (Rds On) of 70 mOhm at 32.5 A and 20 V gate-source voltage. Its gate charge (Qg) is a maximum of 125 nC at 20 V. The APT70SM70B is housed in a TO-247-3 package, suitable for through-hole mounting. Operating temperature ranges from -55°C to 175°C (TJ). This SiC MOSFET is utilized in demanding sectors such as industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 32.5A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | TO-247 [B] |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 125 nC @ 20 V |
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