APT6M100K
MOSFET N-CH 1000V 6A TO220Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation APT6M100K is an N-Channel Power MOSFET designed for high-voltage applications. This component offers a drain-source voltage (Vdss) of 1000V and a continuous drain current (Id) of 6A at 25°C. Key characteristics include a maximum on-resistance (Rds On) of 2.5 Ohms at 3A and 10V, and a gate charge (Qg) of 43 nC at 10V. The device features a maximum power dissipation of 225W (Tc) and an operating temperature range of -55°C to 150°C (TJ). The APT6M100K is housed in a TO-220-3 through-hole package, making it suitable for power conversion and switching applications across various industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 225W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-220 [K] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1410 pF @ 25 V |
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