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APT60M80JVR

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APT60M80JVR

MOSFET N-CH 600V 55A ISOTOP

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microsemi Corporation POWER MOS V® APT60M80JVR is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 55A at 25°C (Tc). The ISOTOP® package with Chassis Mount capability facilitates efficient thermal management, supporting a maximum power dissipation of 568W (Tc). Key electrical characteristics include a maximum Rds(On) of 80mOhm at 500mA and 10V, with a typical gate charge (Qg) of 870 nC at 10V and input capacitance (Ciss) of 14500 pF at 25V. The operating temperature range is -55°C to 150°C (TJ). This component is suitable for use in power supply, motor control, and industrial automation sectors.

Additional Information

Series: POWER MOS V®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseSOT-227-4, miniBLOC
Mounting TypeChassis Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C55A (Tc)
Rds On (Max) @ Id, Vgs80mOhm @ 500mA, 10V
FET Feature-
Power Dissipation (Max)568W (Tc)
Vgs(th) (Max) @ Id4V @ 5mA
Supplier Device PackageISOTOP®
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs870 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds14500 pF @ 25 V

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