APT60M80JVR
MOSFET N-CH 600V 55A ISOTOPManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation POWER MOS V® APT60M80JVR is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 55A at 25°C (Tc). The ISOTOP® package with Chassis Mount capability facilitates efficient thermal management, supporting a maximum power dissipation of 568W (Tc). Key electrical characteristics include a maximum Rds(On) of 80mOhm at 500mA and 10V, with a typical gate charge (Qg) of 870 nC at 10V and input capacitance (Ciss) of 14500 pF at 25V. The operating temperature range is -55°C to 150°C (TJ). This component is suitable for use in power supply, motor control, and industrial automation sectors.
Additional Information
Series: POWER MOS V®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 568W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 5mA |
| Supplier Device Package | ISOTOP® |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 870 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14500 pF @ 25 V |