APT60M75JVFR
MOSFET N-CH 600V 62A ISOTOPManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation's APT60M75JVFR is an N-Channel Power MOSFET from the POWER MOS V® series. This component features a Drain-Source Voltage (Vdss) of 600 V and a continuous drain current (Id) of 62A at 25°C (Tc), with a maximum power dissipation of 700W (Tc). The device offers a low on-resistance (Rds On) of 75mOhm at 31A and 10V (Vgs). Key parameters include a gate charge (Qg) of 1050 nC and input capacitance (Ciss) of 19800 pF at 25V. The APT60M75JVFR is designed for chassis mounting within the SOT-227-4, miniBLOC package, also known as ISOTOP®. Operating temperature ranges from -55°C to 150°C (TJ) with a maximum gate-source voltage (Vgs) of ±30V. This MOSFET is suitable for applications in high-power conversion, motor control, and power factor correction.
Additional Information
Series: POWER MOS V®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 62A (Tc) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 31A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 5mA |
| Supplier Device Package | ISOTOP® |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 1050 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 19800 pF @ 25 V |