APT6040BN
MOSFET N-CH 600V 18A TO247ADManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation's APT6040BN is an N-Channel Power MOSFET from the POWER MOS IV® series. This component features a Drain to Source Voltage (Vdss) of 600 V and a continuous drain current (Id) of 18A at 25°C (Tc). The APT6040BN offers a low Rds On of 400mOhm maximum at 9A and 10V Vgs. Key parameters include a gate charge (Qg) of 130 nC maximum at 10V and an input capacitance (Ciss) of 2950 pF maximum at 25V Vds. With a maximum power dissipation of 310W (Tc), it is housed in a TO-247AD package for through-hole mounting. This robust device is suitable for applications in power supply design and high-voltage switching, operating reliably within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: POWER MOS IV®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 310W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-247AD |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2950 pF @ 25 V |
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