APT6030BN
MOSFET N-CH 600V 23A TO247ADManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Microsemi Corporation's APT6030BN is an N-Channel POWER MOS IV® MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 600 V and a continuous Drain Current (Id) of 23 A at 25°C (Tc). With a maximum power dissipation of 360 W (Tc) and a low on-resistance of 300 mOhm at 11.5 A and 10 V, it offers efficient power handling. The APT6030BN is housed in a TO-247AD package, suitable for through-hole mounting. Key parameters include a gate charge of 210 nC at 10 V and an input capacitance (Ciss) of 3500 pF at 25 V. This device is utilized in power supply, motor control, and industrial applications. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: POWER MOS IV®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 11.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-247AD |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 210 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3500 pF @ 25 V |
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