APT6017B2LLG
MOSFET N-CH 600V 35A T-MAXManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Microsemi Corporation POWER MOS 7® N-Channel MOSFET, part number APT6017B2LLG, features a 600V drain-source voltage and a continuous drain current of 35A at 25°C (Tc). This device offers a maximum on-resistance of 170mOhm at 17.5A and 10V Vgs. With a total power dissipation of 500W (Tc), it is suitable for high-power applications. The TO-247-3 Variant package with T-MAX™ [B2] technology is designed for through-hole mounting. Key parameters include a gate charge of 100nC @ 10V and input capacitance of 4500pF @ 25V. Operating temperature range is -55°C to 150°C (TJ). This component finds use in power supply, industrial, and motor control applications.
Additional Information
Series: POWER MOS 7®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 17.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | T-MAX™ [B2] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |
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