APT5SM170S
SICFET N-CH 1700V 4.6A D3PAKManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation APT5SM170S is an N-Channel SiCFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 1700 V and a continuous Drain Current (Id) of 4.6 A at 25°C (Tc). The device offers a maximum On-Resistance (Rds On) of 1.2 Ohm at 2 A and 20 V (Vgs). Key parameters include a Gate Charge (Qg) of 29 nC at 20 V (Vgs) and an Input Capacitance (Ciss) of 325 pF at 1000 V (Vds). With a maximum power dissipation of 52 W (Tc), it is suitable for demanding power conversion and switching applications. The APT5SM170S operates within a junction temperature range of -55°C to 175°C and is housed in a TO-268-3, D3PAK (2 Leads + Tab), TO-268AA surface mount package. This SiCFET technology is utilized in power supplies, electric vehicles, and industrial motor control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 52W (Tc) |
| Vgs(th) (Max) @ Id | 3.2V @ 500µA |
| Supplier Device Package | D3PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1700 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 325 pF @ 1000 V |
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