APT5SM170B
SICFET N-CH 1700V 5A TO247-3Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation presents the APT5SM170B, an N-Channel SiCFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 1700 V and a continuous drain current (Id) of 5 A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 1.25 Ohms at 2.5 A and 20 V gate drive. With a power dissipation of 65 W (Tc) and a junction temperature range of -55°C to 175°C, it is suitable for demanding power conversion and control systems. Key characteristics include a gate charge (Qg) of 21 nC at 20 V and input capacitance (Ciss) of 249 pF at 1000 V. The APT5SM170B is housed in a TO-247-3 package, utilizing through-hole mounting. This SiC MOSFET is utilized in industries such as industrial power supplies, renewable energy, and electric vehicle power trains.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.25Ohm @ 2.5A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 65W (Tc) |
| Vgs(th) (Max) @ Id | 3.2V @ 500µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1700 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 249 pF @ 1000 V |
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