APT5F100K
MOSFET N-CH 1000V 5A TO220Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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The Microsemi Corporation APT5F100K is an N-Channel Power MOSFET from the POWER MOS 8™ series. This component features a drain-source voltage (Vds) of 1000 V and a continuous drain current (Id) of 5 A at 25°C. With a maximum power dissipation of 225 W (Tc), it is suitable for high-voltage applications. The device has a typical Rds On of 2.8 Ohms at 3 A and 10 V, and a gate charge (Qg) of 43 nC at 10 V. Input capacitance (Ciss) is specified at a maximum of 1409 pF at 25 V. This through-hole component is packaged in a TO-220-3 configuration and operates across a temperature range of -55°C to 150°C. This MOSFET is commonly utilized in power supply units, motor control, and industrial power applications.
Additional Information
Series: POWER MOS 8™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.8Ohm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 225W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 500µA |
| Supplier Device Package | TO-220 [K] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1409 pF @ 25 V |
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