APT58M50JCU3
MOSFET N-CH 500V 58A SOT227Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation APT58M50JCU3, a N-Channel MOSFET from the POWER MOS 8™ series, offers a drain-source voltage of 500V and a continuous drain current of 58A at 25°C (Tc). This component features a low on-resistance of 65mOhm maximum at 42A, 10V, and a maximum power dissipation of 543W (Tc). The APT58M50JCU3 utilizes a SOT-227 package for chassis mounting, suitable for high-power applications. Key parameters include a gate charge of 340 nC at 10V and input capacitance of 10800 pF at 25V. The operating temperature range is -40°C to 150°C (TJ). Typical applications include power switching and motor control systems.
Additional Information
Series: POWER MOS 8™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 58A (Tc) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 42A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 543W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | SOT-227 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 340 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10800 pF @ 25 V |
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