APT55M65JFLL
MOSFET N-CH 550V 63A ISOTOPManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation's APT55M65JFLL is a high-performance N-Channel POWER MOS 7® MOSFET. This component features a drain-source voltage of 550 V and a continuous drain current capability of 63 A at 25°C, with a maximum power dissipation of 595 W. The device exhibits a low on-resistance of 65 mOhm at 31.5 A and 10 V gate drive voltage. Key parameters include input capacitance (Ciss) of 9165 pF and gate charge (Qg) of 205 nC at 10 V. Designed for demanding applications, it is packaged in an ISOTOP® SOT-227-4, miniBLOC configuration for chassis mounting. The operating temperature range is -55°C to 150°C. This MOSFET is utilized in power factor correction, motor control, and industrial power supply applications.
Additional Information
Series: POWER MOS 7®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 63A (Tc) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 31.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 595W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 5mA |
| Supplier Device Package | ISOTOP® |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 550 V |
| Gate Charge (Qg) (Max) @ Vgs | 205 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9165 pF @ 25 V |
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