APT5518BFLLG
MOSFET N-CH 550V 31A TO247-3Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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The Microsemi Corporation POWER MOS 7® APT5518BFLLG is an N-channel Power MOSFET designed for high-power switching applications. This component features a drain-source voltage (Vds) of 550V and a continuous drain current capability of 31A at 25°C (Tc). With a maximum power dissipation of 403W (Tc), it is suitable for demanding thermal environments. The device exhibits a low on-resistance (Rds On) of 180mOhm at 15.5A and 10V gate-source voltage (Vgs). Key parameters include a gate charge (Qg) of 67 nC at 10V and input capacitance (Ciss) of 3286 pF at 25V. The APT5518BFLLG utilizes Metal Oxide technology and is housed in a TO-247-3 through-hole package. This component is commonly employed in power supply units, motor control, and industrial power systems. It supports a maximum gate-source voltage (Vgs) of ±30V and has a threshold voltage (Vgs(th)) of 5V at 1mA.
Additional Information
Series: POWER MOS 7®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 15.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 403W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 550 V |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3286 pF @ 25 V |
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