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APT5510JFLL

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APT5510JFLL

MOSFET N-CH 550V 44A ISOTOP

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microsemi Corporation's POWER MOS 7® APT5510JFLL is an N-Channel MOSFET designed for high-power applications. This device features a maximum drain-source voltage (Vdss) of 550V and a continuous drain current (Id) of 44A at 25°C (Tc). With a low on-resistance (Rds On) of 100mOhm at 22A and 10V, it minimizes conduction losses. The APT5510JFLL offers a maximum power dissipation of 463W (Tc) and utilizes the ISOTOP® package for efficient thermal management, suitable for chassis mounting. Key parameters include a gate charge (Qg) of 124nC at 10V and input capacitance (Ciss) of 5823pF at 25V. This component is frequently employed in power conversion, motor control, and industrial power supply applications. It operates within a temperature range of -55°C to 150°C (TJ).

Additional Information

Series: POWER MOS 7®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseSOT-227-4, miniBLOC
Mounting TypeChassis Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C44A (Tc)
Rds On (Max) @ Id, Vgs100mOhm @ 22A, 10V
FET Feature-
Power Dissipation (Max)463W (Tc)
Vgs(th) (Max) @ Id5V @ 2.5mA
Supplier Device PackageISOTOP®
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)550 V
Gate Charge (Qg) (Max) @ Vgs124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5823 pF @ 25 V

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