APT53N60SC6
MOSFET N-CH 600V 53A D3PAKManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation APT53N60SC6 is an N-Channel Power MOSFET designed for high-voltage, high-current applications. This device features a Drain-to-Source Voltage (Vdss) of 600V and a continuous drain current (Id) capability of 53A at 25°C (Tc). The APT53N60SC6 offers a low on-resistance (Rds On) of 70mOhm at a drain current of 25.8A and a gate-source voltage (Vgs) of 10V. With a maximum power dissipation of 417W (Tc), this MOSFET is suitable for demanding power conversion and control circuits. Key parameters include a gate charge (Qg) of 154 nC at 10V and an input capacitance (Ciss) of 4020 pF at 25V. The component is housed in a TO-268-3, D3PAK (2 Leads + Tab), TO-268AA surface mount package, facilitating efficient thermal management. This MOSFET technology is utilized across various industries including industrial power supplies, renewable energy systems, and electric vehicle charging infrastructure.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 53A (Tc) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 25.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 417W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 1.72mA |
| Supplier Device Package | D3PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 154 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4020 pF @ 25 V |
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