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APT50N60JCU2

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APT50N60JCU2

MOSFET N-CH 600V 52A SOT227

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microsemi Corporation APT50N60JCU2 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 600V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 52A at 25°C (Tc), with a maximum power dissipation of 290W (Tc). The on-resistance (Rds On) is specified as 45mOhm maximum at 22.5A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 150nC maximum at 10V and input capacitance (Ciss) of 7200pF maximum at 25V. The MOSFET is housed in a SOT-227-4, miniBLOC package, suitable for chassis mounting. Operating temperature ranges from -40°C to 150°C (TJ). This component is utilized in industrial power supplies, motor control, and renewable energy systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseSOT-227-4, miniBLOC
Mounting TypeChassis Mount
Operating Temperature-40°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C52A (Tc)
Rds On (Max) @ Id, Vgs45mOhm @ 22.5A, 10V
FET Feature-
Power Dissipation (Max)290W (Tc)
Vgs(th) (Max) @ Id3.9V @ 3mA
Supplier Device PackageSOT-227
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7200 pF @ 25 V

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