APT50N60JCU2
MOSFET N-CH 600V 52A SOT227Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation APT50N60JCU2 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 600V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 52A at 25°C (Tc), with a maximum power dissipation of 290W (Tc). The on-resistance (Rds On) is specified as 45mOhm maximum at 22.5A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 150nC maximum at 10V and input capacitance (Ciss) of 7200pF maximum at 25V. The MOSFET is housed in a SOT-227-4, miniBLOC package, suitable for chassis mounting. Operating temperature ranges from -40°C to 150°C (TJ). This component is utilized in industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 52A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 22.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 290W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 3mA |
| Supplier Device Package | SOT-227 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7200 pF @ 25 V |