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APT50M80B2VRG

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APT50M80B2VRG

MOSFET N-CH 500V 58A T-MAX

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microsemi Corporation POWER MOS V® APT50M80B2VRG is an N-Channel MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 58A at 25°C (Tc). The APT50M80B2VRG exhibits a low on-resistance (Rds On) of 80mOhm maximum at 29A and 10V gate drive. Key electrical parameters include a maximum input capacitance (Ciss) of 8797 pF at 25V and a gate charge (Qg) of 423 nC at 10V. The device is housed in a TO-247-3 variant package with a T-MAX™ [B2] supplier device package, suitable for through-hole mounting. This MOSFET is utilized in power supply units, motor control, and power factor correction circuits across industrial and defense sectors.

Additional Information

Series: POWER MOS V®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3 Variant
Mounting TypeThrough Hole
Operating Temperature-
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C58A (Tc)
Rds On (Max) @ Id, Vgs80mOhm @ 29A, 10V
FET Feature-
Power Dissipation (Max)-
Vgs(th) (Max) @ Id4V @ 2.5mA
Supplier Device PackageT-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)-
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs423 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8797 pF @ 25 V

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