APT50M80B2VRG
MOSFET N-CH 500V 58A T-MAXManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation POWER MOS V® APT50M80B2VRG is an N-Channel MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 58A at 25°C (Tc). The APT50M80B2VRG exhibits a low on-resistance (Rds On) of 80mOhm maximum at 29A and 10V gate drive. Key electrical parameters include a maximum input capacitance (Ciss) of 8797 pF at 25V and a gate charge (Qg) of 423 nC at 10V. The device is housed in a TO-247-3 variant package with a T-MAX™ [B2] supplier device package, suitable for through-hole mounting. This MOSFET is utilized in power supply units, motor control, and power factor correction circuits across industrial and defense sectors.
Additional Information
Series: POWER MOS V®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 58A (Tc) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 29A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4V @ 2.5mA |
| Supplier Device Package | T-MAX™ [B2] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 423 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8797 pF @ 25 V |
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