APT5022BNG
MOSFET N-CH 500V 27A TO247ADManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation POWER MOS IV® APT5022BNG is an N-Channel MOSFET designed for high-voltage power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 500V and a continuous Drain current (Id) of 27A at 25°C. The device offers a maximum On-Resistance (Rds On) of 220mOhm at 13.5A and 10V gate drive. With a high power dissipation capability of 360W (Tc), it is suitable for demanding applications in power supplies, motor control, and industrial automation. The APT5022BNG is housed in a TO-247AD package for through-hole mounting, ensuring robust thermal performance and ease of integration into existing designs. Key parameters include a Gate Charge (Qg) of 210 nC @ 10V and an Input Capacitance (Ciss) of 3500 pF @ 25V. The operating temperature range is from -55°C to 150°C (TJ).
Additional Information
Series: POWER MOS IV®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 13.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-247AD |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 210 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3500 pF @ 25 V |
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