APT5020SVRG
MOSFET N-CH 500V 26A D3PAKManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation POWER MOS V® APT5020SVRG is an N-Channel Power MOSFET designed for high-voltage applications. This component features a drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 26A at 25°C (Tc). The device exhibits a maximum on-resistance (Rds On) of 200mOhm at 500mA and 10V gate drive. Key parameters include a gate charge (Qg) of 225 nC maximum at 10V and an input capacitance (Ciss) of 4440 pF maximum at 25V. The APT5020SVRG is housed in a TO-268-3, D3PAK surface-mount package. This MOSFET is commonly utilized in power supply units, motor control, and lighting applications.
Additional Information
Series: POWER MOS V®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | D3PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 225 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4440 pF @ 25 V |