APT5012JN
MOSFET N-CH 500V 43A ISOTOPManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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The Microsemi Corporation POWER MOS IV® APT5012JN is an N-Channel MOSFET designed for demanding applications. This component features a drain-source voltage of 500V and a continuous drain current of 43A at 25°C, with a maximum power dissipation of 520W (Tc). The APT5012JN offers a low on-resistance of 120mOhm at 21.5A and 10V Vgs. Key parameters include a gate charge of 370 nC at 10V and input capacitance of 6500 pF at 25V. The device utilizes ISOTOP® packaging for efficient thermal management and is designed for chassis mounting. Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for power supply, motor control, and industrial applications.
Additional Information
Series: POWER MOS IV®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 43A (Tc) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 21.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 520W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 2.5mA |
| Supplier Device Package | ISOTOP® |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 370 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6500 pF @ 25 V |
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