APT40SM120S
SICFET N-CH 1200V 41A D3PAKManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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The Microsemi Corporation APT40SM120S is an N-Channel SiCFET designed for high-power applications. This component features a drain-to-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 41 A at 25°C. The device offers a maximum on-resistance (Rds On) of 100 mOhm at 20 A and 20 V gate-source voltage, with a power dissipation capability of 273 W at the same case temperature. The APT40SM120S utilizes a D3PAK (TO-268-3, TO-268AA) surface mount package, making it suitable for demanding environments operating from -55°C to 175°C. Key parameters include a gate charge (Qg) of 130 nC at 20 V and input capacitance (Ciss) of 2560 pF at 1000 V. This SiCFET is commonly employed in power factor correction, electric vehicle charging, and industrial motor drives.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 41A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 273W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 1mA (Typ) |
| Supplier Device Package | D3PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2560 pF @ 1000 V |
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