APT40SM120J
MOSFET N-CH 1200V 32A SOT227Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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The Microsemi Corporation APT40SM120J is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain to Source Voltage (Vdss) of 1200 V and a continuous Drain current (Id) of 32 A at 25°C (Tc). With a maximum power dissipation of 165 W (Tc) and a low on-resistance of 100 mOhm at 20 A and 20 V (Vgs), it is suitable for demanding power conversion tasks. The device utilizes Metal Oxide technology and is housed in a SOT-227-4, miniBLOC package for chassis mounting. Key parameters include a gate charge (Qg) of 130 nC at 20 V and an input capacitance (Ciss) of 2560 pF at 1000 V. Operating temperature ranges from -55°C to 175°C (TJ). This MOSFET is commonly employed in industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 165W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 1mA (Typ) |
| Supplier Device Package | SOT-227 |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2560 pF @ 1000 V |
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