APT40SM120B
SICFET N-CH 1200V 41A TO247Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation's APT40SM120B is a Silicon Carbide (SiC) N-Channel Power MOSFET designed for high-voltage, high-performance applications. This device features a drain-source voltage (Vdss) of 1200V and a continuous drain current (Id) of 41A at 40°C case temperature. The APT40SM120B offers a low on-resistance of 100mOhm at 20A and 20V gate drive voltage. With a maximum power dissipation of 273W (Tc), it is suitable for demanding power conversion and control systems. Key parameters include a gate charge (Qg) of 130 nC at 20V and input capacitance (Ciss) of 2560 pF at 1000V. The device operates within a temperature range of -55°C to 175°C (TJ) and is packaged in a TO-247-3 through-hole configuration. This component is utilized in industries such as industrial power supplies and electric vehicle charging systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 41A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 273W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 1mA (Typ) |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2560 pF @ 1000 V |
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