APT40M75JN
MOSFET N-CH 400V 56A ISOTOPManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Microsemi Corporation's POWER MOS IV® APT40M75JN is an N-Channel MOSFET designed for high-power applications. This component features a drain-to-source voltage (Vdss) of 400 V and a continuous drain current (Id) of 56 A at 25°C, with a maximum power dissipation of 520 W at the same temperature. The APT40M75JN offers a low on-resistance (Rds On) of 75 mOhm at 28 A and 10 V gate drive voltage. Its ISOTOP® package with a SOT-227-4, miniBLOC case facilitates chassis mounting. Key parameters include a gate charge (Qg) of 370 nC and input capacitance (Ciss) of 6800 pF at 25 V. Operating temperature ranges from -55°C to 150°C. This device is commonly found in industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: POWER MOS IV®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 28A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 520W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 2.5mA |
| Supplier Device Package | ISOTOP® |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 370 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6800 pF @ 25 V |
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