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APT40M70JVFR

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APT40M70JVFR

MOSFET N-CH 400V 53A ISOTOP

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microsemi Corporation's POWER MOS V® series APT40M70JVFR is an N-Channel enhancement-mode MOSFET designed for high-power applications. This component features a drain-source voltage (Vdss) of 400V and a continuous drain current (Id) of 53A at 25°C, with a maximum power dissipation of 450W (Tc). The on-resistance (Rds On) is specified at a maximum of 70mOhm at 26.5A and 10V gate-source voltage. With a gate charge (Qg) of 495 nC at 10V and input capacitance (Ciss) of 8890 pF at 25V, this device is suitable for demanding switching applications. The ISOTOP® package, a SOT-227-4 miniBLOC, facilitates chassis mounting for efficient thermal management. Operating temperature range is -55°C to 150°C. Industries utilizing this component include power supplies, motor control, and renewable energy systems.

Additional Information

Series: POWER MOS V®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseSOT-227-4, miniBLOC
Mounting TypeChassis Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C53A (Tc)
Rds On (Max) @ Id, Vgs70mOhm @ 26.5A, 10V
FET Feature-
Power Dissipation (Max)450W (Tc)
Vgs(th) (Max) @ Id4V @ 2.5mA
Supplier Device PackageISOTOP®
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)400 V
Gate Charge (Qg) (Max) @ Vgs495 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8890 pF @ 25 V

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