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APT40M42JN

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APT40M42JN

MOSFET N-CH 400V 86A ISOTOP

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microsemi Corporation POWER MOS IV® APT40M42JN is an N-Channel Power MOSFET designed for high-power switching applications. This component features a Drain-Source Voltage (Vdss) of 400V and a continuous Drain Current (Id) of 86A at 25°C, with a maximum power dissipation of 690W. The APT40M42JN offers a low on-resistance (Rds On) of 42mOhm at 43A and 10V, facilitated by its Metal Oxide technology. Key parameters include a gate charge (Qg) of 760 nC at 10V and input capacitance (Ciss) of 14000 pF at 25V. The device utilizes the ISOTOP® package, specifically SOT-227-4, miniBLOC, for chassis mounting, ensuring efficient thermal management. It operates across a temperature range of -55°C to 150°C. This MOSFET is commonly employed in industrial power supplies, motor control, and renewable energy systems.

Additional Information

Series: POWER MOS IV®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tray
Technical Details:
PackagingTray
Package / CaseSOT-227-4, miniBLOC
Mounting TypeChassis Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C86A (Tc)
Rds On (Max) @ Id, Vgs42mOhm @ 43A, 10V
FET Feature-
Power Dissipation (Max)690W (Tc)
Vgs(th) (Max) @ Id4V @ 5mA
Supplier Device PackageISOTOP®
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)400 V
Gate Charge (Qg) (Max) @ Vgs760 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds14000 pF @ 25 V

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