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APT40M35JVFR

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APT40M35JVFR

MOSFET N-CH 400V 93A ISOTOP

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microsemi Corporation's POWER MOS V® APT40M35JVFR is a high-performance N-Channel power MOSFET designed for demanding applications. Featuring a drain-source voltage (Vdss) of 400V and a continuous drain current (Id) of 93A at 25°C (Tc), this component offers significant power handling capability with a maximum dissipation of 700W (Tc). The device boasts a low on-resistance (Rds On) of 35mOhm at 46.5A and 10V gate drive, ensuring efficient power transfer. Key characteristics include a gate charge (Qg) of 1065 nC at 10V and input capacitance (Ciss) of 20160 pF at 25V. Utilizing ISOTOP® packaging with a SOT-227-4, miniBLOC case, this chassis mount device is suitable for thermal management in power conversion, industrial motor control, and renewable energy systems. It operates within a temperature range of -55°C to 150°C (TJ) with a maximum gate-source voltage (Vgs) of ±30V.

Additional Information

Series: POWER MOS V®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseSOT-227-4, miniBLOC
Mounting TypeChassis Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C93A (Tc)
Rds On (Max) @ Id, Vgs35mOhm @ 46.5A, 10V
FET Feature-
Power Dissipation (Max)700W (Tc)
Vgs(th) (Max) @ Id4V @ 5mA
Supplier Device PackageISOTOP®
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)400 V
Gate Charge (Qg) (Max) @ Vgs1065 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds20160 pF @ 25 V

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