APT4065BNG
MOSFET N-CH 400V 11A TO247ADManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation's APT4065BNG is an N-channel Power MOSFET from the POWER MOS IV® series. This component features a Drain-Source voltage (Vdss) of 400V and a continuous drain current (Id) of 11A at 25°C. With a maximum power dissipation of 180W (Tc), it offers a low on-resistance (Rds On) of 650mOhm at 5.5A and 10V gate drive. Key parameters include a gate charge (Qg) of 55 nC at 10V and input capacitance (Ciss) of 950 pF at 25V. The device is housed in a TO-247AD package suitable for through-hole mounting and operates across a temperature range of -55°C to 150°C. This MOSFET is commonly utilized in power supply units, motor control, and lighting applications.
Additional Information
Series: POWER MOS IV®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-247AD |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 25 V |
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