APT35SM70B
SICFET N-CH 700V 35A TO247-3Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation APT35SM70B is a SiCFET N-Channel power MOSFET designed for high-efficiency applications. This component features a 700V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 35A at 25°C (Tc), with a maximum power dissipation of 176W (Tc). Key electrical characteristics include a maximum on-resistance (Rds On) of 145mOhm at 10A and 20V, and a gate charge (Qg) of 67 nC at 20V. Input capacitance (Ciss) reaches a maximum of 1035 pF at 700V. The device operates over a temperature range of -55°C to 175°C (TJ). Packaged in a TO-247-3 through-hole configuration, this SiCFET is suitable for use in power conversion systems, electric vehicle charging, and industrial motor drives. It supports gate drive voltages up to 20V for optimal Rds On performance.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 145mOhm @ 10A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 176W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1035 pF @ 700 V |
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