APT33N90JCCU2
MOSFET N-CH 900V 33A SOT227Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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The Microsemi Corporation APT33N90JCCU2 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a 900V drain-to-source voltage (Vdss) and a continuous drain current of 33A at 25°C (Tc), with a maximum power dissipation of 290W (Tc). The device exhibits a low on-resistance (Rds On) of 120mOhm at 26A and 10V, with a gate charge (Qg) of 270 nC at 10V and an input capacitance (Ciss) of 6800 pF at 100V. It is housed in a SOT-227 (miniBLOC) package for chassis mounting, offering a wide operating temperature range from -40°C to 150°C. This MOSFET is suitable for demanding applications in power factor correction, switch mode power supplies, and industrial motor drives.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 26A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 290W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 3mA |
| Supplier Device Package | SOT-227 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 270 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6800 pF @ 100 V |
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