APT31N80JC3
MOSFET N-CH 800V 31A ISOTOPManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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The Microsemi Corporation APT31N80JC3 is an N-Channel MOSFET from the CoolMOS™ series. This component features a Drain-Source Voltage (Vdss) of 800V and a continuous drain current (Id) of 31A at 25°C. The device offers a maximum on-resistance (Rds On) of 145mOhm at 22A and 10V drive voltage. With a high power dissipation capability of 833W (Tc), it is designed for demanding applications. The APT31N80JC3 utilizes ISOTOP® packaging with a chassis mount for efficient thermal management. Key parameters include a gate charge (Qg) of 355 nC at 10V and input capacitance (Ciss) of 4510 pF at 25V. This MOSFET is suitable for use in power supply, industrial motor control, and renewable energy systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 145mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 833W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 2mA |
| Supplier Device Package | ISOTOP® |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 355 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4510 pF @ 25 V |
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