APT31N60BCSG
MOSFET N-CH 600V 31A TO247-3Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation APT31N60BCSG is a CoolMOS™ N-Channel Power MOSFET designed for high-efficiency power conversion applications. This through-hole component features a drain-source voltage (Vds) of 600V and a continuous drain current (Id) of 31A at 25°C (Tc), with a maximum power dissipation of 255W (Tc). The APT31N60BCSG offers a low on-resistance (Rds On) of 100mOhm at 18A and 10V gate drive. Key parameters include a gate charge (Qg) of 85 nC at 10V and input capacitance (Ciss) of 3055 pF at 25V. The device operates within a temperature range of -55°C to 150°C (TJ) and is housed in a TO-247-3 package. This MOSFET is suitable for use in industries such as industrial power supplies, server power, and renewable energy systems.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 255W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 1.2mA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 85 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3055 pF @ 25 V |
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