APT30N60KC6
MOSFET N-CH 600V 30A TO220Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation APT30N60KC6 is a 600 V N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component, part of the CoolMOS™ series, features a continuous drain current rating of 30A at 25°C and a maximum power dissipation of 219W. The APT30N60KC6 offers a low on-resistance of 125mOhm at 14.5A and 10V, contributing to reduced conduction losses. Key parameters include a gate charge of 88 nC at 10V and an input capacitance of 2267 pF at 25V. Housed in a standard TO-220-3 package with through-hole mounting, this MOSFET is suitable for demanding applications in power supplies, motor control, and renewable energy systems. The operating temperature range is -55°C to 150°C.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 14.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 219W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 960µA |
| Supplier Device Package | TO-220 [K] |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 88 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2267 pF @ 25 V |
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