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APT30M85BVFRG

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APT30M85BVFRG

MOSFET N-CH 300V 40A TO247

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microsemi Corporation APT30M85BVFRG is an N-Channel Power MOSFET from the POWER MOS V® series. This through-hole component, packaged in a TO-247-3, features a Drain-to-Source Voltage (Vdss) of 300V and a continuous Drain Current (Id) of 40A at 25°C (Tc). The device exhibits a maximum On-Resistance (Rds On) of 85mOhm at 500mA and 10V, with a gate charge (Qg) of 195 nC at 10V and input capacitance (Ciss) of 4950 pF at 25V. Its maximum power dissipation is rated at 300W (Tc). Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for applications in power supply, industrial motor control, and renewable energy systems. The maximum gate-source voltage (Vgs) is ±30V, and the threshold voltage (Vgs(th)) is 4V at 1mA.

Additional Information

Series: POWER MOS V®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Rds On (Max) @ Id, Vgs85mOhm @ 500mA, 10V
FET Feature-
Power Dissipation (Max)300W (Tc)
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device PackageTO-247 [B]
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)300 V
Gate Charge (Qg) (Max) @ Vgs195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4950 pF @ 25 V

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