APT30M70SVRG
MOSFET N-CH 300V 48A D3PAKManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation POWER MOS V® APT30M70SVRG is a high-performance N-channel MOSFET designed for demanding power applications. This component features a 300V drain-source voltage (Vdss) and a continuous drain current (Id) of 48A at 25°C (Tc), with a maximum power dissipation of 370W (Tc). The APT30M70SVRG offers a low on-resistance (Rds On) of 70mOhm at 500mA and 10V Vgs. The device utilizes Metal Oxide technology and is packaged in a D3PAK (TO-268-3, TO-268AA) surface mount configuration. Key parameters include a gate charge (Qg) of 225 nC @ 10V and input capacitance (Ciss) of 5870 pF @ 25V. It operates across a wide temperature range of -55°C to 150°C (TJ) and supports a maximum gate-source voltage (Vgs) of ±30V. This MOSFET is commonly found in industrial, automotive, and telecommunications sectors.
Additional Information
Series: POWER MOS V®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 48A (Tc) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 370W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | D3PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 225 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5870 pF @ 25 V |
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