APT25SM120S
SICFET N-CH 1200V 25A D3Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation's APT25SM120S is an N-Channel SiCFET designed for high-voltage applications. This component offers a Drain to Source Voltage (Vdss) of 1200 V and a continuous drain current (Id) of 25A (Tc) at 25°C. With a maximum power dissipation of 175W (Tc), it is suitable for demanding thermal environments. The APT25SM120S features a low on-resistance (Rds On) of 175mOhm at 10A and 20V, and a gate charge (Qg) of 72 nC at 20V. Operating across a temperature range of -55°C to 175°C (TJ), this SiCFET utilizes a D3 module package for chassis mounting. This device is commonly employed in power conversion, motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | D-3 Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 175mOhm @ 10A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 175W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | D3 |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 20 V |
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