APT25SM120B
SICFET N-CH 1200V 25A TO247Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation APT25SM120B is an N-Channel SiCFET with a 1200V drain-to-source voltage (Vdss). This device offers a continuous drain current (Id) of 25A at 25°C (Tc) and a maximum power dissipation of 175W (Tc). The on-resistance (Rds On) is a maximum of 175mOhm at 10A and 20V. The gate charge (Qg) is rated at 72 nC maximum at 20V. This component is housed in a TO-247-3 package for through-hole mounting. It operates across a temperature range of -55°C to 175°C (TJ). This SiCFET is suitable for applications in power factor correction, motor drives, and electric vehicle charging systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 175mOhm @ 10A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 175W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 20 V |
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