APT20N60SC3G
MOSFET N-CH 600V 20.7A D3PAKManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Microsemi Corporation APT20N60SC3G, a CoolMOS™ N-Channel Power MOSFET, features a 600V drain-source voltage and a continuous drain current of 20.7A at 25°C (Tc). This surface mount device, packaged in a TO-268-3, D3PAK, offers a maximum power dissipation of 208W (Tc) and a low on-resistance of 190mOhm at 13.1A and 10V gate drive voltage. Key parameters include a gate charge of 114 nC at 10V and input capacitance of 2440 pF at 25V. The operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in power factor correction, switch mode power supplies, and motor control systems.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 13.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 1mA |
| Supplier Device Package | D3PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 114 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2440 pF @ 25 V |
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