APT20N60BC3G
MOSFET N-CH 600V 20.7A TO247-3Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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The Microsemi Corporation APT20N60BC3G is an N-Channel Power MOSFET featuring a 600V drain-source voltage and a continuous drain current of 20.7A at 25°C (Tc). This component utilizes the CoolMOS™ technology, offering a low on-resistance of 190mOhm maximum at 13.1A and 10V Vgs. Key characteristics include a gate charge of 114 nC at 10V and an input capacitance (Ciss) of 2440 pF at 25V. With a maximum power dissipation of 208W (Tc), it operates within a temperature range of -55°C to 150°C (TJ). The device is supplied in a TO-247-3 package for through-hole mounting. This MOSFET is suitable for applications in power factor correction, uninterruptible power supplies, and switch-mode power supplies.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 13.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 1mA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 114 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2440 pF @ 25 V |
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