APT20M38SVFRG
MOSFET N-CH 200V 67A D3PAKManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation POWER MOS V® APT20M38SVFRG is an N-Channel power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 200 V and a continuous drain current (Id) of 67 A at 25°C (Tc), with a maximum power dissipation of 370 W (Tc). The APT20M38SVFRG exhibits a low on-resistance (Rds On) of 38 mOhm at 500 mA and 10 V, and a gate charge (Qg) of 225 nC at 10 V. Key electrical parameters include an input capacitance (Ciss) of 6120 pF at 25 V and a gate-source threshold voltage (Vgs(th)) of 4 V at 1 mA. The maximum gate-source voltage (Vgs) is ±30 V. Packaged in a TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, this surface mount component operates across an industrial temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for applications in power supply, motor control, and industrial automation.
Additional Information
Series: POWER MOS V®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 67A (Tc) |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 370W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | D3PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 225 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6120 pF @ 25 V |
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