APT20M38BVFRG
MOSFET N-CH 200V 67A TO247Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation's APT20M38BVFRG, a POWER MOS V® series N-channel MOSFET, offers a 200V drain-source voltage and 67A continuous drain current at 25°C. This component features a low on-resistance of 38mOhm maximum at 500mA and 10V gate-source voltage. Key parameters include input capacitance (Ciss) of 6120pF maximum at 25V and gate charge (Qg) of 225nC maximum at 10V. With a maximum power dissipation of 370W at 25°C case temperature, it is packaged in a through-hole TO-247-3 (TO-247 [B]) for robust thermal management. The APT20M38BVFRG is suitable for applications in power supply, motor control, and industrial power conversion. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: POWER MOS V®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 67A (Tc) |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 370W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-247 [B] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 225 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6120 pF @ 25 V |
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