APT20M22B2VFRG
MOSFET N-CH 200V 100A T-MAXManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Microsemi Corporation's APT20M22B2VFRG, an N-Channel POWER MOS V® series MOSFET, offers exceptional performance with a 200V drain-to-source voltage and a continuous drain current of 100A at 25°C (Tc). This through-hole component, packaged in a TO-247-3 Variant T-MAX™ [B2] format, boasts a maximum power dissipation of 520W (Tc) and a low on-resistance of 22mOhm at 500mA and 10V. Key parameters include a gate charge (Qg) of 435nC at 10V and input capacitance (Ciss) of 10200pF at 25V. The device supports a gate-source voltage (Vgs) up to ±30V and a threshold voltage (Vgs(th)) of 4V at 2.5mA. It operates across a temperature range of -55°C to 150°C (TJ). This component is suitable for applications in power supply, motor control, and industrial automation.
Additional Information
Series: POWER MOS V®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 520W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 2.5mA |
| Supplier Device Package | T-MAX™ [B2] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 435 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10200 pF @ 25 V |
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