APT20M19JVR
MOSFET N-CH 200V 112A ISOTOPManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation POWER MOS V® APT20M19JVR is an N-Channel MOSFET designed for high-power applications. This component features a drain-source voltage (Vdss) of 200 V and a continuous drain current (Id) of 112 A at 25°C (Tc). The device offers a maximum power dissipation of 500 W (Tc) and a low on-resistance (Rds On) of 19 mOhm at 500 mA and 10 V Vgs. Key characteristics include a gate charge (Qg) of 495 nC at 10 V and input capacitance (Ciss) of 11640 pF at 25 V. The APT20M19JVR utilizes Metal Oxide technology and is housed in a SOT-227-4, miniBLOC package for chassis mounting, with the ISOTOP® supplier device package designation. Operating temperature range is from -55°C to 150°C (TJ). This MOSFET is suitable for use in power supplies, motor control, and industrial power conversion systems.
Additional Information
Series: POWER MOS V®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 112A (Tc) |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | ISOTOP® |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 495 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11640 pF @ 25 V |
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