APT17N80SC3G
MOSFET N-CH 800V 17A D3PAKManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation's APT17N80SC3G is an N-Channel Power MOSFET from the CoolMOS™ series. This device features a drain-source voltage (Vdss) of 800V and a continuous drain current (Id) of 17A at 25°C. With a maximum power dissipation of 208W (Tc), it is suitable for demanding applications. The APT17N80SC3G offers a low on-resistance (Rds On) of 290mOhm at 11A and 10V, and a gate charge (Qg) of 90nC at 10V. The input capacitance (Ciss) is rated at a maximum of 2250pF at 25V. This MOSFET is housed in a TO-268-3, D3PAK (2 Leads + Tab), TO-268AA surface mount package. Operating temperature range is from -55°C to 150°C (TJ). This component finds application in power supply units and industrial motor control.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 1mA |
| Supplier Device Package | D3PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2250 pF @ 25 V |
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