APT17N80BC3G
MOSFET N-CH 800V 17A TO247-3Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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The Microsemi Corporation APT17N80BC3G is an N-Channel Power MOSFET from the CoolMOS™ series. This component offers a Drain-Source Voltage (Vdss) of 800 V and a continuous drain current (Id) of 17A at 25°C (Tc). With a maximum power dissipation of 208W (Tc), it features a low on-resistance (Rds On) of 290mOhm at 11A and 10V. The device has a gate charge (Qg) of 90 nC at 10V and an input capacitance (Ciss) of 2250 pF at 25V. Designed for through-hole mounting in a TO-247-3 package, it operates within an ambient temperature range of -55°C to 150°C (TJ). This component is suitable for applications in power supply units, motor control, and industrial power conversion.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 1mA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2250 pF @ 25 V |
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