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APT14050JVFR

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APT14050JVFR

MOSFET N-CH 1400V 23A ISOTOP

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

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Microsemi Corporation's POWER MOS V® APT14050JVFR is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain to Source Voltage (Vdss) of 1400 V and a continuous drain current (Id) of 23 A at 25°C, with a maximum power dissipation of 694 W. The device exhibits a maximum on-resistance (Rds On) of 500 mOhm at 11.5 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 820 nC and input capacitance (Ciss) of 13500 pF. The APT14050JVFR utilizes MOSFET (Metal Oxide) technology and is housed in a SOT-227-4, miniBLOC package, suitable for chassis mounting. It operates within a temperature range of -55°C to 150°C. This MOSFET is commonly found in power factor correction, industrial motor drives, and high voltage power supplies.

Additional Information

Series: POWER MOS V®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseSOT-227-4, miniBLOC
Mounting TypeChassis Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C23A (Tc)
Rds On (Max) @ Id, Vgs500mOhm @ 11.5A, 10V
FET Feature-
Power Dissipation (Max)694W (Tc)
Vgs(th) (Max) @ Id4V @ 5mA
Supplier Device PackageISOTOP®
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)1400 V
Gate Charge (Qg) (Max) @ Vgs820 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds13500 pF @ 25 V

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