APT130SM70J
SICFET N-CH 700V 78A SOT227Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation APT130SM70J is a Silicon Carbide (SiCFET) N-Channel power MOSFET designed for high-performance applications. This component features a drain-to-source voltage (Vdss) of 700V and a continuous drain current (Id) of 78A at 25°C (Tc). The APT130SM70J boasts a low on-resistance (Rds On) of 45mOhm maximum at 60A and 20V gate drive voltage. With a maximum power dissipation of 273W (Tc), it is suitable for demanding power conversion tasks. The device is housed in a SOT-227 (ISOTOP®) package, facilitating chassis mounting and efficient thermal management. Key electrical characteristics include a gate charge (Qg) of 270 nC maximum at 20V and an input capacitance (Ciss) of 3950 pF maximum at 700V. Operating temperature range is -55°C to 175°C (TJ). This SiC MOSFET is utilized in industries such as industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 78A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 60A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 273W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 1mA |
| Supplier Device Package | SOT-227 (ISOTOP®) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 270 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3950 pF @ 700 V |
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