APT130SM70B
SICFET N-CH 700V 110A TO247-3Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation APT130SM70B is a Silicon Carbide (SiC) N-Channel power MOSFET designed for high-efficiency power conversion applications. This device offers a 700V breakdown voltage (Vdss) and a continuous drain current rating of 110A at 25°C (Tc), with a maximum power dissipation of 556W (Tc). The APT130SM70B features a low on-resistance of 45mOhm at 60A and 20V (Vgs). Its high switching speeds and reduced switching losses are characteristic of SiC technology, making it suitable for demanding applications in electric vehicle charging, industrial motor drives, and power supplies. The component is packaged in a TO-247-3 through-hole configuration for robust thermal management. Key parameters include a gate charge (Qg) of 220 nC at 20V (Vgs) and input capacitance (Ciss) of 3950 pF at 700V (Vds). The operating junction temperature range is -55°C to 175°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 60A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 556W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 1mA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 220 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3950 pF @ 700 V |
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