APT12080JVR
MOSFET N-CH 1200V 15A ISOTOPManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation's POWER MOS V® APT12080JVR is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 1200 V and a continuous drain current (Id) capability of 15 A at 25°C, with a maximum power dissipation of 450 W. The device exhibits a maximum Rds On of 800 mOhm at 7.5 A and 10 V gate drive. Key parameters include an input capacitance (Ciss) of 7800 pF at 25 V and a gate charge (Qg) of 485 nC at 10 V. The APT12080JVR utilizes ISOTOP® packaging for chassis mounting, operating within a temperature range of -55°C to 150°C. This MOSFET is suitable for use in power supply, motor drive, and industrial applications.
Additional Information
Series: POWER MOS V®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 450W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 2.5mA |
| Supplier Device Package | ISOTOP® |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 485 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7800 pF @ 25 V |
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