APT11N80KC3G
MOSFET N-CH 800V 11A TO220Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation's APT11N80KC3G is an N-Channel Power MOSFET from the CoolMOS™ series, designed for high-voltage applications. This through-hole component features a drain-source voltage (Vdss) of 800V and a continuous drain current (Id) capability of 11A at 25°C, with a maximum power dissipation of 156W. The device offers a low on-resistance (Rds On) of 450mOhm at 7.1A and 10V, and a gate charge (Qg) of 60 nC at 10V. Its input capacitance (Ciss) is rated at 1585 pF maximum. Encased in a TO-220-3 package, the APT11N80KC3G is suitable for power factor correction, switch-mode power supplies, and industrial motor control applications. Operating temperature range is -55°C to 150°C.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 7.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 156W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 680µA |
| Supplier Device Package | TO-220 [K] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1585 pF @ 25 V |
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